新品推荐 Products
Products 产品详情
产品名称: 爱思强Planetary Reactor® AIX G5+ for GaN on 200 mm Si
上市日期:2015-01-14
行星式反应器以水平层流反应器的原理为基础。 水平层流原理可确保不同材料间的精确过渡,在控制即使只有若干原子厚度的薄膜的沉积率方面,更是无可匹敌。

 

Increase your productivity and
performance.
Take advantage of G5+ for
high-performance and low-cost
GaN-on-Si devices:
Dedicated technology package for GaN
on 200 mm Si
Compatible with the AIX G5 HT platform
Enables Si-style mass manufacturing
including chamber reset
Planetary Reactor® Technology
- Excellent and symmetric uniformities
- Controlled bow behavior
- Using standard Si substrates


AIX G5 Series GaN on Si
characteristics
Unique axis symmetric wafer
performance like Si single wafer
reactor
- Wafer bow
- Thickness, composition,
concentration
- Device yield
Warm ceiling results in lowest heat
flux through wafer
- smallest wafer bow by vertical
temperature gradient
- Enabling standard Si wafer
thickness
In-situ temperature profile
tweaking by individual GFR control
Customized temperature
optimization by recess shaping

 

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